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  •   University of Thessaly Institutional Repository
  • Επιστημονικές Δημοσιεύσεις Μελών ΠΘ (ΕΔΠΘ)
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  •   University of Thessaly Institutional Repository
  • Επιστημονικές Δημοσιεύσεις Μελών ΠΘ (ΕΔΠΘ)
  • Δημοσιεύσεις σε περιοδικά, συνέδρια, κεφάλαια βιβλίων κλπ.
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Monitoring supply current thresholds for smart device's security enhancement

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Author
Myridakis D., Spathoulas G., Kakarountas A., Schinianakis D., Lueken J.
Date
2019
Language
en
DOI
10.1109/DCOSS.2019.00058
Keyword
Anomaly detection
Distributed computer systems
Hardware security
Intrusion detection
Manufacture
Application specific
Attack detection
Current monitoring
Functional characteristics
IOT applications
Physical characteristics
Security enhancements
Smart devices
Internet of things
Institute of Electrical and Electronics Engineers Inc.
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Abstract
The rapid growth of connected devices and the sensitive data they generate poses a significant challenge for manufacturers seeking to comprehensively protect their devices from attack. This paper presents a study and its results from the correlation of the supply current of a smart device to its functional characteristics in order to detect a manufacturing or an operational anomaly. This concept was originated from the fact that most of the available smart devices in the market (connected to the Internet, establishing thus the so-called Internet of Things - IoT), are Application Specific devices thus having limited functionality. Issues on IoT applications, urging for solutions, are security, availability, and reliability. Awareness of the typical operation of a smart device in terms of operation and functionality may prove valuable, since any deviation may warn for an operational or functional anomaly. In this paper, the deviation (either increase or decrease) of the supply current is exploited for this reason. This work aims to affect the intrusion detection process for IoT and proposes for consideration new inputs of interest with a collateral interest of study. The results present 100% of attack detection. © 2019 IEEE.
URI
http://hdl.handle.net/11615/76859
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