Εμφάνιση απλής εγγραφής

dc.creatorGeorgakidis C., Simoglou S., Sotiriou C.en
dc.date.accessioned2023-01-31T07:40:12Z
dc.date.available2023-01-31T07:40:12Z
dc.date.issued2022
dc.identifier10.1109/DFT56152.2022.9962347
dc.identifier.isbn9781665459389
dc.identifier.issn25761501
dc.identifier.urihttp://hdl.handle.net/11615/72041
dc.description.abstractThe manufacturing of modern Integrated Circuits (ICs), resistant against faults caused by ionising radiation, has become quite challenging due to the rapid advancement of VLSI technology. Additionally, the Radiation Hardening process, which involves making electronic cells and circuits resistant to damage or faults induced by ionising radiation, deviates from the conventional design flow. Thus, it generally suffers from insufficient support from industrial EDA tools. RADPlace is an academic timing-driven detailed placement algorithm that ensures spacing constraints among TMR triplet members. However, RADPlace, considering only the top critical paths of the circuit, limits the improvement in circuit timing, especially Total Negative Slack (TNS). In this work, we propose an improved RADPlace version (RADPlace-I) and a Multi-Step RADPlace version (RADPlace-MS), separating timing-driven optimisations from the placement step. Experimental results indicate that RADPlace-I achieves an average 21% improvement in Worst Negative Slack (WNS), while it achieves TNS improvement in most cases. On the other hand, RADPlace-MS achieves an average 54% and 45% improvement in WNS and TNS, respectively, compared to the original RADPlace version, with negligible impact on circuit total area and power. © 2022 IEEE.en
dc.language.isoenen
dc.sourceProceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFTen
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85143791819&doi=10.1109%2fDFT56152.2022.9962347&partnerID=40&md5=af0883452945245f16a72d928defb8bb
dc.subjectApplication specific integrated circuitsen
dc.subjectComputer aided designen
dc.subjectHardeningen
dc.subjectIonizing radiationen
dc.subjectTiming circuitsen
dc.subjectConventional designen
dc.subjectDetailed placementen
dc.subjectElectronic cellsen
dc.subjectElectronics circuitsen
dc.subjectHardening processen
dc.subjectOptimisationsen
dc.subjectSpacing constrainten
dc.subjectTiming-drivenen
dc.subjectTMRen
dc.subjectVLSI technologyen
dc.subjectRadiation hardeningen
dc.subjectInstitute of Electrical and Electronics Engineers Inc.en
dc.titleRADPlace-MS: A Timing-Driven Placer and Optimiser for ASICs Radiation Hardeningen
dc.typeconferenceItemen


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