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  •   University of Thessaly Institutional Repository
  • Επιστημονικές Δημοσιεύσεις Μελών ΠΘ (ΕΔΠΘ)
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  •   University of Thessaly Institutional Repository
  • Επιστημονικές Δημοσιεύσεις Μελών ΠΘ (ΕΔΠΘ)
  • Δημοσιεύσεις σε περιοδικά, συνέδρια, κεφάλαια βιβλίων κλπ.
  • View Item
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Single Event Transients Generation and Propagation Flow using Commercial EDA Tools

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Author
Simoglou S., Georgakidis C., Lilitsis I., Sotiriou C., Andjelkovic M., Krstic M.
Date
2021
Language
en
DOI
10.1109/MIEL52794.2021.9569180
Keyword
High electron mobility transistors
Microelectronics
Radiation effects
SPICE
Transients
CMOS technology
EDA tools
Induced voltages
Irradiation experiments
Microelectronic systems
Radiation immunity
Radiation-induced
Single event transients
SPICE simulations
TCAD simulation
Radiation hardening
Institute of Electrical and Electronics Engineers Inc.
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Abstract
The ever increasing demand for reliable microelectronic systems in the presence of radiation, combined with the continuous shrinking of CMOS technologies, has rendered the impact of radiation-induced voltage glitches, known as Single Event Transients (SETs), more and more critical. In order to mitigate such errors, the analysis of circuit radiation immunity to these effects is mandatory. This analysis is, nowadays, performed either with manufacturing and irradiation experiments, which is prohibitively expensive or with TCAD and SPICE simulations, which are computationally expensive, thus they can be applied only to relatively small circuits. In this work, we present a methodology of SET generation and propagation, using SPICE and Static Timing Analysis flows, respectively. Our method is orders of magnitude faster than simulation and yields 1.6% error, on average. © 2021 IEEE.
URI
http://hdl.handle.net/11615/78985
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