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An analytical energy model for the reset transition in unipolar resistive-switching RAMs

Thumbnail
Autor
Chawa M.M.A., Picos R., Garcia-Moreno E., Stavrinides S.G., Roldan J.B., Jimenez-Molinos F.
Fecha
2016
Language
en
DOI
10.1109/MELCON.2016.7495318
Materia
Energy dissipation
Energy utilization
Memristors
Average errors
Charge flux
Current voltage
Energy model
Power and energy consumption
Resistive switching
Simple expression
Three parameters
RRAM
Institute of Electrical and Electronics Engineers Inc.
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Resumen
In this paper we develop and test an analytical model for the total energy dissipation during the reset transition of an unipolar ReRAM device. To do so, we have considered the ReRAM as a memristor, and we have used a memristor model in the Charge-Flux space, instead of the usual current-voltage variables. The used model is very simple, with only three parameters, and provides accurate results. It also allows developing simple expressions for the power and energy consumption. We consider the case of a ramp input signal, and we compare the predictions of our 3-parameters model with experimental results, with an average error below 1%. We also present the compact expressions for the case of a ReRAM undergoing a reset transition with a pulsed input. © 2016 IEEE.
URI
http://hdl.handle.net/11615/72773
Colecciones
  • Δημοσιεύσεις σε περιοδικά, συνέδρια, κεφάλαια βιβλίων κλπ. [19735]

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