• Nitrogen-vacancy defects in germanium 

      Kuganathan N., Grimes R.W., Chroneos A. (2022)
      While nitrogen doping has been investigated extensively in silicon, there is only limited information on its interaction with vacancies in germanium, despite most point defect processes in germanium being vacancy controlled. ...
    • Theoretical investigation of nitrogen-vacancy defects in silicon 

      Potsidi M.S., Kuganathan N., Christopoulos S.-R.G., Sarlis N.V., Chroneos A., Londos C.A. (2022)
      Nitrogen-vacancy defects are important for the material properties of silicon and for the performance of silicon-based devices. Here, we employ spin polarized density functional theory to calculate the minimum energy ...