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Degradation effects on single crystalline silicon photovoltaic modules subjected to high impulse-voltages

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Autore
Naxakis I., Christodoulou C., Perraki V., Pyrgioti E.
Data
2017
Language
en
DOI
10.1049/iet-smt.2016.0376
Soggetto
Photovoltaic cells
Characteristic curve
Degradation effect
Electrical characteristic
Electrical performance
High voltage laboratories
Photovoltaic modules
Single crystalline silicon
Theoretical estimation
Photovoltaic effects
Institution of Engineering and Technology
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Abstract
Scope of the current study is to examine the electrical characteristics of photovoltaic (PV) modules after being subjected to high impulse voltages, which are usually generated by lightning or switching surges. Tests were conducted at the High Voltage Laboratory of the University of Patras in Greece on PV modules of 5 and 195 Wp derived from different manufacturers, by performing various stress scenarios. The I-V and P-V characteristic curves of the examined modules, before and after the impulse voltage stress tests, are compared with each other considering the modules' ability to maintain their nominal electrical characteristics. After certain periods of time, the electrical performances of the stressed modules are examined again in order to ensure whether they regain some or all of their properties in case of prior differentiation. The experimental results are compared with theoretical estimations, so as to confirm the rightness of the presented procedure. © The Institution of Engineering and Technology.
URI
http://hdl.handle.net/11615/77126
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  • Δημοσιεύσεις σε περιοδικά, συνέδρια, κεφάλαια βιβλίων κλπ. [19743]
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